Stark Effect Spectroscopy of Mono- and Few-Layer MoS2
نویسندگان
چکیده
منابع مشابه
Erratum: Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2
Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a study of highly crystalline islands of MoS2 grown via a refined chemical vapor deposition synthesi...
متن کاملInter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2
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Two-dimensional black phosphorus (BP) has sparked enormous research interest due to its high carrier mobility, layer-dependent direct bandgap and outstanding in-plane anisotropic properties. BP is one of the few two-dimensional materials where it is possible to tune the bandgap over a wide energy range from the visible up to the infrared. In this article, we report the observation of a giant St...
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We report ab initio calculations of the phonon dispersion relations of the single-layer and bulk dichalcogenides MoS2 and WS2. We explore in detail the behavior of the Raman-active modes A1g and E1 2g as a function of the number of layers. In agreement with recent Raman spectroscopy measurements [C. Lee et al., ACS Nano 4, 2695 (2010)], we find that the A1g mode increases in frequency with an i...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2016
ISSN: 1530-6984,1530-6992
DOI: 10.1021/acs.nanolett.5b03954